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| Preliminary Datasheet BCR2PM-14LE Triac Low Power Use Features IT (RMS) : 2 A VDRM : 800 V (Tj = 125C) IFGT I, IRGT I, IRGT III : 10 mA Planar Passivation Type The product guaranteed maximum junction temperature 150C. R07DS0233EJ0100 Rev.1.00 Jan 05, 2011 Outline RENESAS Package code: PRSS0003AA-B (Package name: TO-220F(2) ) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Electric rice cooker, electric pot, and controller for other heater Precautions on Usage When the BCR2PM-14LE is used, do not attach the heat radiating fin. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 14 800 700 840 Unit V V V Condition Tj = 125C Tj = 150C R07DS0233EJ0100 Rev.1.00 Jan 05, 2011 Page 1 of 6 BCR2PM-14LE Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Ratings 2 10 0.41 1 0.1 6 1 - 40 to +150 - 40 to +150 2.0 Unit A A A2s W W V A C C g Conditions Preliminary Commercial frequency, sine full wave 360 conduction 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltage Note2 Gate trigger current Note2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-a) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.1 -- 0.5 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 2.1 2.0 2.0 2.0 10 10 10 -- 45 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 150C, VDRM applied Tj = 25C, ITM = 3 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note3 commutation voltage Tj = 150C, VD = 1/2 VDRM Junction to ambient, Natural convection Tj = 125C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = -1.0 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Main Current Main Voltage (dv/dt)c R07DS0233EJ0100 Rev.1.00 Jan 05, 2011 Page 2 of 6 BCR2PM-14LE Preliminary Performance Curves Maximum On-State Characteristics 102 7 Tj = 25C 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 10 Rated Surge On-State Current Surge On-State Current (A) 9 8 7 6 5 4 3 2 1 0 100 23 5 7 101 23 5 7 102 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60 Hz) Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics (II and III) 3 2 Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 IFGT I, IRGT I, IRGT III 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100120 140160 Typical Example Gate Voltage (V) 101 7 5 3 2 100 7 5 3 2 10-1 PGM = 1 W VGM = 6 V VGT PG(AV) = 0.1 W IGM = 1 A IRGT I, IRGT III 7 VGD = 0.1 V 5 100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature Transient Thermal Impedance (C/W) 103 7 5 3 2 102 7 5 3 2 Typical Example Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 VFGT I, VRGT I VRGT III ( 101 -60 -40-20 0 20 40 60 80 100120 140 160 Natural Convection No Fins Print Board t = 1.6 mm Solder Land : 2 mm ) 101 2 3 5 7102 2 3 5 7 103 2 3 5 7104 2 3 5 7 105 Junction Temperature (C) Conduction Time (Cycles at 60 Hz) R07DS0233EJ0100 Rev.1.00 Jan 05, 2011 Page 3 of 6 BCR2PM-14LE Preliminary Allowable Ambient Temperature vs. RMS On-State Current 160 Natural Convection No Fins Print Board t = 1.6 mm Solder Land : 2 mm Maximum On-State Power Dissipation 1.8 On-State Power Dissipation (W) 1.4 Ambient Temperature (C) 1.6 360 Conduction 1.2 Resistive, inductive loads 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 140 120 100 80 60 40 20 0 0 ( ) Curves apply regardless of conduction angle Resistive, inductive loads 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Holding Current vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120140 160 Typical Example Typical Example -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Junction Temperature (C) Latching Current vs. Junction Temperature 102 7 5 Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100120 140 160 Typical Example Distribution T2+, G- Latching Current (mA) 3 2 10 7 5 3 2 1 100 7 5 T2+, G+ 3 2 10 -1 T2-, G- 40 80 120 160 -40 0 Junction Temperature (C) Junction Temperature (C) R07DS0233EJ0100 Rev.1.00 Jan 05, 2011 Page 4 of 6 BCR2PM-14LE Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125C) 160 140 Typical Example Tj = 125C Preliminary Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150C) 160 140 Typical Example Tj = 150C 100 (%) Breakover Voltage (dv/dt = xV/s) Breakover Voltage (dv/dt = 1V/s) 120 100 80 60 40 20 0 100 2 3 5 7101 2 3 5 7102 2 3 5 7103 0 I Quadrant III Quadrant Breakover Voltage (dv/dt = xV/s) Breakover Voltage (dv/dt = 1V/s) 100 (%) 120 100 80 60 40 20 0 100 2 3 5 7101 2 3 5 7102 2 3 5 7103 0 Rate of Rise of Off-State Voltage (V/s) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics Critical Rate of Rise of Off-State Commutating Voltage (V/s) 101 7 Typical Example 5 3 2 100 7 5 3 2 10-1 -1 10 2 Minimum Characteristics Value Gate Trigger Current vs. Gate Current Pulse Width 100 (%) 103 7 5 3 2 102 7 5 3 2 101 100 23 5 7 101 23 5 7 102 Typical Example IRGT III III Quadrant Gate Trigger Current (tw) Gate Trigger Current (DC) Conditions VD = 200 V IT = 1 A = 500 s Tj = 125C IFGT I IRGT I I Quadrant 3 5 7 100 23 5 7 101 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 6V V A RG 6V V A RG Test Procedure I 6 Test Procedure II 6V V A RG Test Procedure III R07DS0233EJ0100 Rev.1.00 Jan 05, 2011 Page 5 of 6 BCR2PM-14LE Preliminary Package Dimensions Package Name TO-220F(2) JEITA Package Code SC-67 RENESAS Code PRSS0003AA-B Previous Code MASS[Typ.] 2.0g Unit: mm 10.5Max 5.2 2.8 5.0 1.2 17 3.2 0.2 13.5Min 3.6 1.3Max 0.8 2.54 2.54 8.5 0.5 2.6 Ordering Information Orderable Part Number Packing Quantity BCR2PM-14LE#B00 Bag 100 pcs. BCR2PM-14LE-AS#B00 Tube 50 pcs. Note : Please confirm the specification about the shipping in detail. Remark Straight type AS Lead form R07DS0233EJ0100 Rev.1.00 Jan 05, 2011 4.5 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. 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